PART |
Description |
Maker |
WP06R12S05 WP06R24D12 WP06R12S12 WP06R24S12 WP06R1 |
5-6 Watt High Density, Wide Input Range DC/DC Converter
|
Murata Power Solutions Inc.
|
WP06R24D15C WP06R24D12C WP06R48D05C WP06R12D05C WP |
5-6 Watt High Density, Wide Input Range DC/DC Converter
|
Murata Power Solutions Inc.
|
ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|
ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压7500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压5000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Semtech Corporation
|
SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
|
Semtech Corporation Semtech, Corp.
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|